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Piezoresistive Effect of Doped Carbon Nanotube/Cellulose Films |
WANG Wan-Lu1,2;LIAO Ke-Jun1;LI Yong1;WANG Yong-Tian1 |
1Department of Applied Physics, Chongqing University, Chongqing 400044
2Key Laboratory of Education Ministry for Photoelectron Technology and System, Chongqing University, Chongqing 400044
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Cite this article: |
WANG Wan-Lu, LIAO Ke-Jun, LI Yong et al 2003 Chin. Phys. Lett. 20 1544-1547 |
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Abstract The strain-induced resistance changes in iodine-doped and undoped carbon nanotube films were investigated by a three-point bending test. Carbon nanotubes were fabricated by hot filament chemical vapor deposition. The experimental results showed that there has a striking piezoresistive effect in carbon nanotube films. The gauge factor for I-doped and undoped carbon nanotube films under 500 microstrain was about 125 and 65 respectively at room temperature, exceeding that of polycrystalline silicon (30) at 35°C. The origin of the piezoresistivity in the films may be ascribed to a strain induced change in the band gap for the doped tubes and to the intertube contact resistance for the undoped tubes.
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Keywords:
61.46.+w
81.07.-b
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Published: 01 September 2003
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PACS: |
61.46.+w
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81.07.-b
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(Nanoscale materials and structures: fabrication and characterization)
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