| Original Articles |
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Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy |
| LI Zhong-Hui;YANG Zhi-Jian;QIN Zhi-Xin;TONG Yu-Zhen;YU Tong-Jun;LU Shu;YANG Hua;ZHANG Guo-Yi |
| State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Research Center for Wide Band-gap Semiconductor, Peking University, Beijing 100871 |
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| Cite this article: |
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LI Zhong-Hui, YANG Zhi-Jian, QIN Zhi-Xin et al 2003 Chin. Phys. Lett. 20 1350-1352 |
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Abstract The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2 nm with narrow FWHM of 14.3 nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from 10 mA to 50 mA, the red-shift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.
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| Keywords:
73.63.Hs
82.33.Ya
78.55.Cr
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Published: 01 August 2003
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| PACS: |
73.63.Hs
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(Quantum wells)
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82.33.Ya
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(Chemistry of MOCVD and other vapor deposition methods)
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78.55.Cr
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(III-V semiconductors)
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