| Original Articles |
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Low Resistivity C54 Phase TiSi2 Films Synthesized by a Novel Two-Step Method |
| LI Dan-Feng1,2;GU Chang-Zhi1;GUO Cai-Xin1,2;YUE Shuang-Lin1;HU Chang-Wen2,3 |
| 1State Key Laboratory of Surface Physics, Institute of Physics, Chinese Academy of Sciences, Bejing 100080
2Institute of Polyoxometalate Chemistry, Faculty of Chemistry, Northeast Normal University, Changchun 130024
3Chemistry of Department, Beijing Institute of Technology, Beijing 100081 |
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| Cite this article: |
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LI Dan-Feng, GU Chang-Zhi, GUO Cai-Xin et al 2003 Chin. Phys. Lett. 20 1329-1332 |
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Abstract Synthesis and growth properties of the TiSi2 film on a Si (001) substrate are investigated. A novel two-step method is used for deposition of the C54 phase TiSi2 film with low resistivity. The first step is the formation of the C49 phase TiSi2 at a relative low substrate temperature of 400°C, followed by rapid thermal annealing process at 850°C in N2 for the formation of the C54 phase TiSi2 as the second step. Finally, selective wet etching is employed to remove the un-reaction Ti on the surface and the low resistivity C54 TiSi2 film can be obtained. The films deposited under various parameters are evaluated by scanning electron microscopy, x-ray diffraction and the resistivity measurement. Compared with other sputtering technologies used commonly for TiSi2 synthesis, this two-step method has apparent advantages such as the mild synthesis temperature and the high purity of the final product with low resistivity, uniform large area and improving surface roughness. In addition, the film also shows that the low coefficient of resistivity-temperature appears in the temperature range from 20°C to 800°C.
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| Keywords:
68.55.-a
73.61.-r
81.15.cd
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Published: 01 August 2003
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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73.61.-r
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(Electrical properties of specific thin films)
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81.15.Cd
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(Deposition by sputtering)
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