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Characteristics of Shallow Electron Traps in Cubic AgCl Microcrystals Doped with K4Fe(CN)6 |
| LI Xiao-Wei;GENG Ai-Cong;YANG Shao-Peng;HAN Li;FU Guang-Sheng |
| College of Physics Science and Technology, Hebei University,
Baoding 071002 |
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| Cite this article: |
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LI Xiao-Wei, GENG Ai-Cong, YANG Shao-Peng et al 2003 Chin. Phys. Lett. 20 1323-1325 |
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Abstract A model is proposed to describe the photoelectron decay process at room temperature in cubic AgCl microcrystals homogeneously doped with K4Fe(CN)6. By combining calculation of the kinetic equations resulted from the model with a microwave absorption dielectric-spectrum measuring technique, the capture cross-section and the trap depth of shallow electron traps induced by [Fe(CN)6]4- at room temperature are obtained, which are 3.560 x 10-17cm2 and 0.115 eV, respectively. Based on the two parameters, the optimal doping amount of K4Fe(CN)6 is easily gained to be 2 ppm by computer calculation.
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| Keywords:
61.72.Bb
68.55.Ln
82.20.Pm
33.60.Cv
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Published: 01 August 2003
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| PACS: |
61.72.Bb
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(Theories and models of crystal defects)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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82.20.Pm
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(Rate constants, reaction cross sections, and activation energies)
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33.60.Cv
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