| Original Articles |
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Theoretical Analysis of Characteristics of GaxIn1-xNyAs1-y/GaAs Quantum Well Lasers with Different Intermediate Layers |
| ZHANG Wei;XU Ying-Qiang;NIU Zhi-Chuan;WU Rong-Han |
| State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHANG Wei, XU Ying-Qiang, NIU Zhi-Chuan et al 2003 Chin. Phys. Lett. 20 1261-1263 |
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Abstract Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of GaInNAs|GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GaInNAs|GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.
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| Keywords:
42.55.Px
42.70.Hj
78.20.Bh
78.20.Ci
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Published: 01 August 2003
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.70.Hj
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(Laser materials)
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78.20.Bh
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(Theory, models, and numerical simulation)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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