Chin. Phys. Lett.  2003, Vol. 20 Issue (5): 692-695    DOI:
Original Articles |
Preparation of Diamond-Like Carbon Films in Methane by Electron Cyclotron Resonance Microwave Plasma Source Ion Implantation
LI Xin1;TANG Zhen-An1;MA Guo-Ja2;WU Zhi-Meng2;Deng Xin-Lu2
1Department of Electronic Engineering, Microsystem Research Center, Dalian University of Technology, Dalian 116024 2State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024
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LI Xin, TANG Zhen-An, MA Guo-Ja et al  2003 Chin. Phys. Lett. 20 692-695
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Abstract Diamond-like carbon (DLC) films were prepared on Si (100) substrates by ion implantation from an electron cyclotron resonance microwave plasma source. During the implantation, 650 W microwave power was used to produce discharge plasma with methane as working gas, and -20 kV voltage pulses were applied to the substrate holder to accelerate ions in the plasma. Confocal Raman spectra confirmed the DLC characteristics of the films. Fourier-transform infrared characterization indicates that the DLC films were composed of sp3 and sp2 carbon-bonded hydrogen. The hardness of the films was evaluated with a Nano Indenter-XP System. The result shows that the highest hardness value was 14.6 GPa. The surface rms roughness of the films was as low as 0.104 nm measured with an atomic force microscope. The friction coefficient of the films was checked using a ball-on-disk microtribometer. The average friction coefficient is approximately 0.122.

Keywords: 52.77.Dq      81.05.Uw      81.15.-z     
Published: 01 May 2003
PACS:  52.77.Dq (Plasma-based ion implantation and deposition)  
  81.05.Uw  
  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I5/0692
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