Chin. Phys. Lett.  2003, Vol. 20 Issue (4): 568-570    DOI:
Original Articles |
Preparation and Characterization of GaN Nanowires
XUE Cheng-Shan1;YANG Ying-Ge2;MA Hong-Lei2;ZHUANG Hui-Zhao1;MA Jin2
1Institute of Semiconductor, Shandong Normal University, Jinan 250014 2School of Physics and Microelectronics, Shandong University, Jinan 250100
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XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei et al  2003 Chin. Phys. Lett. 20 568-570
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Abstract GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX center to valence band.
Keywords: 78.55.Cr      74.25.Gz      61.16.Bg     
Published: 01 April 2003
PACS:  78.55.Cr (III-V semiconductors)  
  74.25.Gz (Optical properties)  
  61.16.Bg  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I4/0568
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XUE Cheng-Shan
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MA Hong-Lei
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