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Preparation and Characterization of GaN Nanowires |
XUE Cheng-Shan1;YANG Ying-Ge2;MA Hong-Lei2;ZHUANG Hui-Zhao1;MA Jin2 |
1Institute of Semiconductor, Shandong Normal University, Jinan 250014
2School of Physics and Microelectronics, Shandong University, Jinan 250100 |
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Cite this article: |
XUE Cheng-Shan, YANG Ying-Ge, MA Hong-Lei et al 2003 Chin. Phys. Lett. 20 568-570 |
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Abstract GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission electron microscopy and scanning electron microscopy. A strong blue photoluminescence is observed for room-temperature measurement, which attributes to electron transition from DX center to valence band.
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Keywords:
78.55.Cr
74.25.Gz
61.16.Bg
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Published: 01 April 2003
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