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Analytic Solution for In-Plane Valence Subbands of Strained SiGe Superlattice |
| LU Yan-Wu1;SUN Gregory2 |
| 1Department of Physics, Beijing Jiaotong University, Beijing 100044
2Physics Department, University of Massachusetts at Boston, Boston, MA 02125, USA |
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| Cite this article: |
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LU Yan-Wu, SUN Gregory 2003 Chin. Phys. Lett. 20 2226-2228 |
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Abstract Effective mass theory is used to calculate the in-plane valence subbands of strained SiGe superlattice within the 6 x 6 Luttinger model and under a correct boundary condition. The envelope wavefunctions are given analytically as a linear combination of bulk wavefuctions. The boundary conditions imposed on the envelope functions yield a 24 x 24 matrix, and from the zeros of its determinant the inplane energy dispersion E is obtained as a function of inplane wavevector k||. We discuss the mixing among the heavy-hole, light-hole and spin-split-off states at finite k|| and the dependence of the dispersion on the spin-split-off band and strain.
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| Keywords:
71.15.-m
73.21.Cd
78.30.Am
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Published: 01 December 2003
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| PACS: |
71.15.-m
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(Methods of electronic structure calculations)
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73.21.Cd
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(Superlattices)
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78.30.Am
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(Elemental semiconductors and insulators)
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