| Original Articles |
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Fabrication of Thermo-Optic Switch in Silicon-on-Insulator
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| WANG Zhang-Tao;XIA Jin-Song;FAN Zhong-Chao;CHEN Shao-Wu;YU Jin-Zhong
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| State Key Laboratory on Integrated Optoelectronics, Institute
of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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WANG Zhang-Tao, XIA Jin-Song, FAN Zhong-Chao et al 2003 Chin. Phys. Lett. 20 2185-2187 |
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Abstract Silicon-on-insulator technology has been used to fabricate 2 x 2 thermo-optic switches. The switch shows crosstalk of -23.4 dB and extinction ratio of 18.1 dB in the bar-state. The switching speed is less than 30 μs and the power consumption is about 420 mW. The measured excess loss is 1.8 dB. These merits make the switch more attractive for applications in wavelength division multiplexing.
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| Keywords:
42.82.Ds
42.82.Cr
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Published: 01 December 2003
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| PACS: |
42.82.Ds
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(Interconnects, including holographic interconnects)
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42.82.Cr
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(Fabrication techniques; lithography, pattern transfer)
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