Chin. Phys. Lett.  2003, Vol. 20 Issue (10): 1861-1863    DOI:
Original Articles |
Realization of Red-Organic-Light Emitting Diode by Introducing the Double Emitting Zone
JIANG Wen-Long1,2;HOU Jing-Ying1;ZHAO Yi1;LIU Shi-Yong1
1National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023 2Electronic Information and Engineering Department, Jilin Normal University, Siping 136000
Cite this article:   
JIANG Wen-Long, HOU Jing-Ying, ZHAO Yi et al  2003 Chin. Phys. Lett. 20 1861-1863
Download: PDF(587KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract A saturated red-organic-light emitting diode (OLED) has been realized by doping an emitting material both in the hole-transporting layer (HTL) and the electron-transporting layer (ETL) to form double emitting zone. The red dopant, 4-(Dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), was doped into the N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) layer and the tris (8-quinolinolate) aluminum (Alq3) layer, both of which act as the emitting layers. The optimal device, with a structure of ITO/CuPc/NPB/NPB:DCJTB/Alq3:DCJTB/Alq3/LiF/Al, showed good chromaticity coordinates (x = 0.63, y = 0.36) at 8 V. Uniquely, the current efficiency of the device was relatively independent of the drive voltage in a wide range from 8 V to 20 V. That may be helpful to ameliorate the lifetime of the organic electroluminescent devices and to adjust the gray-scale for the future full-color display panel.
Keywords: 78.60.Fi      78.20.e      78.55.Et     
Published: 01 October 2003
PACS:  78.60.Fi (Electroluminescence)  
  78.20.e  
  78.55.Et (II-VI semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I10/01861
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
JIANG Wen-Long
HOU Jing-Ying
ZHAO Yi
LIU Shi-Yong
Related articles from Frontiers Journals
[1] LIU Ling, XU Xiao-Liang**, LEI Jie-Mei, YIN Nai-Qiang. Nanostructured Metal-Enhanced Photoluminescence of Micro-Sr2Si5N8:Eu2+ Phosphors[J]. Chin. Phys. Lett., 2012, 29(1): 1861-1863
[2] LI Hai-Xia, CHENG Chuan-Fu** . Light Scattering of Rough Orthogonal Anisotropic Surfaces with Secondary Most Probable Slope Distributions[J]. Chin. Phys. Lett., 2011, 28(8): 1861-1863
[3] YIN Yang, RAN Guang-Zhao**, ZHANG Bin, QIN Guo-Gang** . Photo- and Electro-Luminescence at 1.54µm from Er3+ in SiC:Er2O3 Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 1861-1863
[4] LIU Yan-Song, LU Hai-Fei, XU Xiao-Liang**, GONG Mao-Gang, LIU Ling, YANG Zhou . Localized Surface Plasmons Enhanced Ultraviolet Emission of ZnO Films[J]. Chin. Phys. Lett., 2011, 28(5): 1861-1863
[5] LIAN Jia-Rong**, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs[J]. Chin. Phys. Lett., 2011, 28(4): 1861-1863
[6] LI Hai-Xia, LIU Chun-Xiang, CHEN Xiao-Yi, ZHANG Mei-Na, CHENG Chuan-Fu** . Measurement of Random Surface Parameters by Angle-Resolved In-plane Light Scattering with Constant Perpendicular Wave Vector[J]. Chin. Phys. Lett., 2011, 28(2): 1861-1863
[7] TANG Hai-Ping, HE Hai-Ping**, LIU Chao, KWON Bong-Jun, YE Zhi-Zhen, LEE Soonil, PARK Ji-Yong*** . Photoluminescence of Nominally Undoped Heavy n-Type ZnO Nanowires[J]. Chin. Phys. Lett., 2011, 28(2): 1861-1863
[8] CHEN Jun, FAN Guang-Han**, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer[J]. Chin. Phys. Lett., 2011, 28(12): 1861-1863
[9] FENG Lie-Feng**, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(10): 1861-1863
[10] ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 1861-1863
[11] LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 1861-1863
[12] ZHU Shao-Li, ZHOU Wei. Effect of Media on the Electric Field of a Rhombic Nanostructure Array[J]. Chin. Phys. Lett., 2010, 27(6): 1861-1863
[13] GUO Mei-Li, ZHANG Xiao-Dong, LIANG Chun-Tian, JIA Guo-Zhi. Mechanism of Visible Photoactivity of F-Doped TiO2[J]. Chin. Phys. Lett., 2010, 27(5): 1861-1863
[14] WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 1861-1863
[15] LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan. Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films[J]. Chin. Phys. Lett., 2010, 27(4): 1861-1863
Viewed
Full text


Abstract