| Original Articles |
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Interface Roughness Scattering on Electronic Transport in a
Quantum Well |
| ZHENG Yi-Song;LÜ Tian-Quan;ZHANG Cheng-Xiang;SU Wen-Hui |
| Department of Physics, Jilin University, Changchun 130023
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| Cite this article: |
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ZHENG Yi-Song, LÜ, Tian-Quan et al 2003 Chin. Phys. Lett. 20 1844-1847 |
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Abstract Several theoretical models are established to simulate the interface roughness in a quantum well. The numerical result shows that the roughness correlation function always deviates from the extensively used Gaussian form to some extent, which depends on what a model is used. The influence of such a deviation on the electronic transport property is investigated by assuming several different analytical forms of the correlation function. It is found that the Fermi wave vector is crucial to determine whether the conductivity depends sensitively on the details of the correlation function.
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| Keywords:
73.63.Hs
73.50.Bk
72.10.Fk
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Published: 01 October 2003
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| PACS: |
73.63.Hs
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(Quantum wells)
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73.50.Bk
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(General theory, scattering mechanisms)
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72.10.Fk
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(Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect))
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