Chin. Phys. Lett.  2003, Vol. 20 Issue (10): 1841-1843    DOI:
Original Articles |
Surface Properties of Unintentionally Doped GaN Film and Its Contact Behaviour with Ni/Cr/Au Compound Metals
UAN Jin-She1,2;CHEN Guang-De1;QI Ming3;LI Ai-Zhen3;XIE Lun-Jun1
1Department of Applied Physics, Xi’an Jiaotong University, Xi’an 710049 2Department of Applied Physics, Xi’an University of Technology, Xi’an 710048 3Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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UAN Jin-She, CHEN Guang-De, QI Ming et al  2003 Chin. Phys. Lett. 20 1841-1843
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Abstract The surface properties of GaN films grown by plasma-assisted molecular beam epitaxy were investigated by using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy, while the depth profile was analysed by the Ar ion sputtering method. The contaminative carbon and silicon are chiefly adsorbed onto the surface while oxygen and aluminum diffuse into the bulk to distribute in a certain depth. The mixture oxides is roughly 0.1μm in thickness. Based on the analytical results of XPS of the GaN films, the Ni/Cr/Au interdigital metal-semiconductor-metal (MSM) structure has been fabricated. It has been found that the contact behaviour of the Ni/Cr/Au/undoped GaN exhibits a linear I-V characteristic under dark and 362-nm light excitation without annealing treatment. The lower resistance of the MSM structure has also been observed.
Keywords: 73.61.Ey      73.40.Sx      73.40.Cg     
Published: 01 October 2003
PACS:  73.61.Ey (III-V semiconductors)  
  73.40.Sx (Metal-semiconductor-metal structures)  
  73.40.Cg (Contact resistance, contact potential)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I10/01841
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UAN Jin-She
CHEN Guang-De
QI Ming
LI Ai-Zhen
XIE Lun-Jun
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