| Original Articles |
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Local Surface Potential of GaN Nanostructures Probed by Kelvin
Force Microscopy |
| GU Xiao-Xiao1;HUANG Da-Ming1;MORKOC Hadis2 |
| 1Surface Physics Laboratory and Department of Physics, Fudan University, Shanghai 200433
2Department of Electrical Engineering, Virginia Commonwealth University, Richmond, Virginia 23220, USA |
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| Cite this article: |
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GU Xiao-Xiao, HUANG Da-Ming, MORKOC Hadis 2003 Chin. Phys. Lett. 20 1822-1825 |
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Abstract We have measured the fluctuation in local surface potential of GaN epitaxial films having two different types of nanostructure, as-grown islands or etched pits, by Kelvin probe force microscopy. We found that the perimeters of as-grown islands and the internal walls of etchd pits have lower surface potential as compared to the as-grown c-plane. The results show that the crystallographic facets tilted with respect to c-plane have higher work function and are electrically more active than c-surface.
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| Keywords:
68.65.-k
68.55.-a
73.30.+y
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Published: 01 October 2003
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| PACS: |
68.65.-k
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(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
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68.55.-a
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(Thin film structure and morphology)
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73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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