Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

Chin. Phys. Lett.

2003, Vol. 20

Issue (10): 1741-1743 DOI:

Original Articles

Diode-Pumped Passively Q-Switched Yb:YAG Microchip Laser with a GaAs as Saturable Absorber

{ZHANG Qiu-Lin¹;FENG Bao-Hua¹;ZHANG Dong-Xiang¹;FU Pan-Ming¹;ZHANG Zhi-Guo¹;ZHAO Zhi-Wei²;DENG Pei-Zhen²;XU Jun²;XU Xiao-Dong²;WANG Yong-Gang³;MA Xiao-Yu³

¹Laboratory of Optical Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ²Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 ³Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

{ZHANG Qiu-Lin, FENG Bao-Hua, ZHANG Dong-Xiang et al 2003 Chin. Phys. Lett. 20 1741-1743

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Abstract A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4μJ 52 ns pulses at 1030 nm with a pulse repetition rate of 7.8 kHz in a TEM₀₀-mode.

Keywords: 42.55.Xi 42.60.Gd

Published: 01 October 2003

PACS:	42.55.Xi	(Diode-pumped lasers)
	42.60.Gd	(Q-switching)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I10/01741

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	{ZHANG Qiu-Lin
	FENG Bao-Hua
	ZHANG Dong-Xiang
	FU Pan-Ming
	ZHANG Zhi-Guo
	ZHAO Zhi-Wei
	DENG Pei-Zhen
	XU Jun
	XU Xiao-Dong
	WANG Yong-Gang
	MA Xiao-Yu

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