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Fabrication of Single Crystalline Silicon on Glass by Smart-Cut Technique |
| SONG Hua-Qing1,2;SHI Jing2;ZHANG Miao1;LIN Qing1;LIN Cheng-Lu1 |
| 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Department of Physics, Wuhan University, Wuhan 430072 |
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| Cite this article: |
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SONG Hua-Qing, SHI Jing, ZHANG Miao et al 2003 Chin. Phys. Lett. 20 108-110 |
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Abstract Single crystalline silicon films are transferred on to a glass substrate by the smart-cut technique, which is based on H+ ions implantation, anodic bonding and layer transfer. Structures of the resulting thin film silicon on glass (SOG) are characterized by transmission-electron microscopy, scanning electron microscopy and Raman spectroscopy. The results show that SOG substrates fabricated by the smart-cut have advantages of steep top Si/glass interface and good monocrystalline Si quality. The Hall-effect measurement indicates that the single crystalline SOG substrates have a better electrical property compared with polycrystalline silicon SOG substrates.
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| Keywords:
68.37.Lp
68.35.Ct
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Published: 01 January 2003
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| PACS: |
68.37.Lp
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(Transmission electron microscopy (TEM))
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68.35.Ct
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(Interface structure and roughness)
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