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Experimental Study of the Plasma Fluorination of Y-Ba-Cu-O Thin
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| LI Qin1;FU Ze-Lu1;JI Zheng-Ming1;FENG Yi-Jun1;KANG Lin1;YANG Sen-Zu1;WU Pei-Heng1;WANG Xiao-Shu2;YE Yu-Da2 |
| 1Institute of Superconductor Electronics, Department of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Modern Analysis Center, Nanjing University, Nanjing 210093
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| Cite this article: |
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LI Qin, FU Ze-Lu, JI Zheng-Ming et al 2002 Chin. Phys. Lett. 19 1340-1343 |
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Abstract We have experimentally studied the surface modifications of the
Y-Ba-Cu-O (YBCO) thin films by CF4 plasma. The intensity of the plasma fluorination was controlled by changing the biasing voltage and the time of the plasma treatment. Microstructure analyses reveal that the oxygen content of the YBCO thin films had been changed. Transport measurements of sufficient fluorinated YBCO films imply that the films had been changed totally into an oxygen-deficient semi-conducting state. From these experimental results we believe that the plasma fluorination is a quite useful method to form controllable thin barrier layer in fabricating interface engineered junctions and to form a stable narrow weak-link region in fabricating planar superconductor-normal-superconductor junctions.
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| Keywords:
74.76.-w
74.90.+n
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Published: 01 September 2002
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