Bootstrap Current Increment After Siliconization on the HT-7
Tokamak

Chin. Phys. Lett.

2002, Vol. 19

Issue (8): 1141-1143 DOI:

Original Articles

Bootstrap Current Increment After Siliconization on the HT-7 Tokamak

ZHANG Xian-Mei¹;WAN Bao-Nian²;LU Yuan-Cheng¹

¹Department of Physics, East China University of Science and Technology, Shanghai 200237 ²Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031

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ZHANG Xian-Mei, WAN Bao-Nian, LU Yuan-Cheng 2002 Chin. Phys. Lett. 19 1141-1143

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Abstract We present some results for the estimatation of the bootstrap current after siliconization on the HT-7 tokamak. After siliconization, the plasma pressure gradient and the electron temperature near the boundary are larger than that before siliconization. These factors influence the ratio of the bootstrap current to the total plasma current to increases from several percent to above 10%. The results are expected to explain the previous experimental phenomena that, after siliconization, the plasma current profile is broadened and the higher current can be obtained easily on the HT-7 tokamak experiment.

Keywords: 52.25.Fi 52.55.Fa

Published: 01 August 2002

PACS:	52.25.Fi	(Transport properties)
	52.55.Fa	(Tokamaks, spherical tokamaks)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I8/01141

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	ZHANG Xian-Mei
	WAN Bao-Nian
	LU Yuan-Cheng

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