Original Articles |
|
|
|
|
Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures
|
XING Qi-Jiang |
Department of Physics, Peking University, Beijing 100871 |
|
Cite this article: |
XING Qi-Jiang 2002 Chin. Phys. Lett. 19 685-688 |
|
|
Abstract Stress field profiles and dielectric constant variations in InGaAsP/InP double heterostructures caused by a 110 nm-thick W0.95Ni0.05 metal thin film strain stripe are calculated. Both theoretical and experimental results demonstrate the form of photoelastic waveguide structure in the InGaAsP/InP double heterostructures. For a 4μm-width W0.95Ni0.05 thin film strain stripe, the difference between dielectric constants of waveguide at the center and the edge of stripe is $9 \times 10-2 - 2 x 10-2 in the depth range from 0.2 to 2μm of the semiconductor. At a given depth, the width of strain stripe for optimal waveguide structure is determined. The maximal change of dielectric constant for the waveguide is an inverse proportion of the depth.
|
Keywords:
42.79.Gn
85.60.Bt
78.66.Fd
|
|
Published: 01 May 2002
|
|
PACS: |
42.79.Gn
|
(Optical waveguides and couplers)
|
|
85.60.Bt
|
(Optoelectronic device characterization, design, and modeling)
|
|
78.66.Fd
|
(III-V semiconductors)
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|