| Original Articles |
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Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures
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| XING Qi-Jiang |
| Department of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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XING Qi-Jiang 2002 Chin. Phys. Lett. 19 685-688 |
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Abstract Stress field profiles and dielectric constant variations in InGaAsP/InP double heterostructures caused by a 110 nm-thick W0.95Ni0.05 metal thin film strain stripe are calculated. Both theoretical and experimental results demonstrate the form of photoelastic waveguide structure in the InGaAsP/InP double heterostructures. For a 4μm-width W0.95Ni0.05 thin film strain stripe, the difference between dielectric constants of waveguide at the center and the edge of stripe is $9 \times 10-2 - 2 x 10-2 in the depth range from 0.2 to 2μm of the semiconductor. At a given depth, the width of strain stripe for optimal waveguide structure is determined. The maximal change of dielectric constant for the waveguide is an inverse proportion of the depth.
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| Keywords:
42.79.Gn
85.60.Bt
78.66.Fd
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Published: 01 May 2002
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| PACS: |
42.79.Gn
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(Optical waveguides and couplers)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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78.66.Fd
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(III-V semiconductors)
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