Chin. Phys. Lett.  2002, Vol. 19 Issue (5): 685-688    DOI:
Original Articles |
Photoelastic Effect and Optimal Waveguide Structure in InGaAsP/InP Double Heterostructures
XING Qi-Jiang
Department of Physics, Peking University, Beijing 100871
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XING Qi-Jiang 2002 Chin. Phys. Lett. 19 685-688
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Abstract Stress field profiles and dielectric constant variations in InGaAsP/InP double heterostructures caused by a 110 nm-thick W0.95Ni0.05 metal thin film strain stripe are calculated. Both theoretical and experimental results demonstrate the form of photoelastic waveguide structure in the InGaAsP/InP double heterostructures. For a 4μm-width W0.95Ni0.05 thin film strain stripe, the difference between dielectric constants of waveguide at the center and the edge of stripe is $9 \times 10-2 - 2 x 10-2 in the depth range from 0.2 to 2μm of the semiconductor. At a given depth, the width of strain stripe for optimal waveguide structure is determined. The maximal change of dielectric constant for the waveguide is an inverse proportion of the depth.
Keywords: 42.79.Gn      85.60.Bt      78.66.Fd     
Published: 01 May 2002
PACS:  42.79.Gn (Optical waveguides and couplers)  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
  78.66.Fd (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2002/V19/I5/0685
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