Influences of Annealing on the Opto-electronic Properties of
ZnO Films Grown by Plasma-Enhanced MOCVD

Chin. Phys. Lett.

2002, Vol. 19

Issue (4): 581-583 DOI:

Original Articles

Influences of Annealing on the Opto-electronic Properties of ZnO Films Grown by Plasma-Enhanced MOCVD

WANG Jin-Zhong¹;DU Guo-Tong¹;WANG Xin-Qiang¹;CHANG Yu-Chun¹;YAN Wei¹;YANG Shu-Ren¹;MA Yan¹;WANG Hai-Song¹;GAO Ding-San¹;LIU Xiang²;CAO Hui²;XU Jun-Ying²;R. P. H. Chang²

¹Department of Electronic Engineering and Key Laboratory on Integrated Photoelectronics, Jilin University, Changchun 130023 ²Material Research Center, Northwestern University, Evanston, Illinois, U.S.A.

Cite this article:

WANG Jin-Zhong, DU Guo-Tong, WANG Xin-Qiang et al 2002 Chin. Phys. Lett. 19 581-583

Download: PDF(322KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapor deposition. The samples are then annealed at a higher temperature. The resistivity, concentration of electron, mobility and optically pumped threshold of both as-grown and annealed films are investigated. Furthermore, their structural and optical properties are also examined with x-ray diffraction, emission spectra and optical transmission spectra. The results indicate that the quality of ZnO thin films can be improved by annealing.

Keywords: 81.05.-t 81.15.Gh 78.20.-e

Published: 01 April 2002

PACS:	81.05.-t	(Specific materials: fabrication, treatment, testing, and analysis)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.20.-e	(Optical properties of bulk materials and thin films)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I4/0581

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WANG Jin-Zhong
	DU Guo-Tong
	WANG Xin-Qiang
	CHANG Yu-Chun
	YAN Wei
	YANG Shu-Ren
	MA Yan
	WANG Hai-Song
	GAO Ding-San
	LIU Xiang
	CAO Hui
	XU Jun-Ying
	R. P. H. Chang

Related articles from Frontiers Journals

[1]	LU Ran,JIANG Gen-Shan,LI Bin,ZHAO Quan-Liang,ZHANG De-Qing,YUAN Jie,CAO Mao-Sheng. Electrical Properties of Lead Zirconate Titanate Thick Film Containing Micro- and Nano-Crystalline Particles**[J]. Chin. Phys. Lett., 2012, 29(5): 581-583
[2]	HU Guo-Hang, ZHAO Yuan-An, LI Da-Wei, XIAO Qi-Ling. Wavelength Dependence of Laser-Induced Bulk Damage Morphology in KDP Crystal: Determination of the Damage Formation Mechanism[J]. Chin. Phys. Lett., 2012, 29(3): 581-583
[3]	SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 581-583
[4]	XIANG Xia, SHI Xiao-Yan, GAO Xiao-Lin, JI Fang, WANG Ya-Jun, LIU Chun-Ming, ZU Xiao-Tao. Effect of N-Doping on Absorption and Luminescence of Anatase TiO₂ Films[J]. Chin. Phys. Lett., 2012, 29(2): 581-583
[5]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 581-583
[6]	SANG Ling, WANG Jun, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 581-583
[7]	LI Zhe-Yang, , HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices**[J]. Chin. Phys. Lett., 2011, 28(9): 581-583
[8]	DOU Fei, ZHANG Xin-Ping . Charge Transfer Channels in Formation of Exciplex in Polymer Blends**[J]. Chin. Phys. Lett., 2011, 28(9): 581-583
[9]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 581-583
[10]	CHEN Heng-Zhi, YANG Bin, SUN Yan, ZHANG Ming-Fu, WANG Zhu, ZHANG Rui, ZHANG Zhi-Guo, CAO Wen-Wu, . Optical Temperature Sensor Using Infrared-to-Visible-Frequency Upconversion in Er³⁺/Yb³⁺−Codoped Bi₃TiNbO₉ Ceramics**[J]. Chin. Phys. Lett., 2011, 28(8): 581-583
[11]	CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan, , LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 581-583
[12]	CHEN Yi-Xin, SHEN Guang-Di, ZHU Yan-Xu, GUO Wei-Ling, LI Jian-Jun . Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors**[J]. Chin. Phys. Lett., 2011, 28(6): 581-583
[13]	ZHAN Feng, WANG Hai-Li, HE Ji-Fang, WANG Juan, HUANG She-Song, NI Hai-Qiao, NIU Zhi-Chuan . Multilayer Antireflection Coating for Triple Junction Solar Cells**[J]. Chin. Phys. Lett., 2011, 28(4): 581-583
[14]	CHEN Yao, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 581-583
[15]	WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 581-583

Viewed

Full text

Abstract