Exciton-Phonon Scattering in CdSe/ZnSe Quantum Dots

Chin. Phys. Lett.

2002, Vol. 19

Issue (4): 578-580 DOI:

Original Articles

Exciton-Phonon Scattering in CdSe/ZnSe Quantum Dots

ZHANG Li-Gong;SHEN De-Zhen;FAN Xi-Wu;LU Shao-Zhe

Laboratory of Excited State Process, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Acadenry of Sciences, Changchun 130021

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ZHANG Li-Gong, SHEN De-Zhen, FAN Xi-Wu et al 2002 Chin. Phys. Lett. 19 578-580

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Abstract A temperature-dependent photoluminescence measurement is performed in the CdSe/ZnSe quantum dots with a ZnCdSe quantum well. We deduce the temperature dependence of the exciton line-width and peak energy of the zero-dimensional exciton in the quantum dots and two-dimensional exciton in the CdSe wetting layer. The experimental data reveals a reduction of homogeneous broadening of exciton line in the quantum dots in comparison with that in the two-dimensional wetting layer, which indicates the decrease of exciton and optical phonon coupling in the CdSe quantum dots.

Keywords: 78.66.Hf 63.22.+m

Published: 01 April 2002

PACS:	78.66.Hf	(II-VI semiconductors)
	63.22.+m

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I4/0578

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	ZHANG Li-Gong
	SHEN De-Zhen
	FAN Xi-Wu
	LU Shao-Zhe

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