| Original Articles |
|
|
|
|
High-Quality ZrO2 Thin Films Deposited on Silicon by
High Vacuum Electron Beam Evaporation |
| ZHANG Ning-Lin;WAN Qing;SONG Zhi-Tang;SHEN Qin-Wo;ZHU Xiang-Rong;LIN Cheng-Lu |
| State Key Laboratory of Functional Materials for Informatics,
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
|
| Cite this article: |
|
ZHANG Ning-Lin, WAN Qing, SONG Zhi-Tang et al 2002 Chin. Phys. Lett. 19 395-397 |
|
|
|
|
Abstract Zirconium oxide films were deposited on p-type Si (100) substrates using high vacuum electron beam evaporation (HVEBE) at room temperature. X-ray photoelectric spectroscopy shows that the dominating chemical state of zirconia thin films is in the fully oxidized state of Zr4+, no matter whether annealed in oxygen. The structure information from x-ray diffraction shows that zirconia thin films deposited at room temperature by HVEBE were completely amorphous before and after the annealing. The spreading resistance profile indicates that ZrO2 thin films have excellent insulation property (with resistance of more than 108Ω) and the thickness is 800Å. After thermal treatment at 600°C in O2 ambient, the root-mean-square roughness changed from 8.09Å of the as-deposited film to 13.8Å across an area of 1 x 1μm2.
|
| Keywords:
68.55.Jk
68.60.Wm
|
|
|
Published: 01 March 2002
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
