| Original Articles |
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Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterosturctures Using Pre-deposition Surface Treatment |
| LIU Jie1;SHEN Bo1;WANG Mao-Jun1;ZHOU Yu-Gang1;ZHENG Ze-Wei1;ZHANG Rong1;SHI Yi1;ZHENG You-Dou1;T. Someya2; Y. Arakawa2 |
| 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
2Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Kamaba 4-6-1, Meguro-Ku, Tokyo 153, Japan |
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| Cite this article: |
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LIU Jie, SHEN Bo, WANG Mao-Jun et al 2002 Chin. Phys. Lett. 19 1853-1855 |
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Abstract Pt/Au Schottky contacts were fabricated on modulation-doped Al0.22GaN0.78/GaN heterostructures. Some different pre-deposition surface treatments were used to prevent the formation of the native oxide layer on the Al0.22GaN0.78 surface. X-ray photoelectron spectroscopy (XPS) measurements indicate that the pre-deposition surface treatment with boiling (NH4)2S solution can remove the native oxide layer on the Al0.22GaN0.78 surface effectively. The highest Schottky barrier height of 1.13 eV was obtained on the (NH4)2S-treated Al0.22GaN0.78 heterostructure.
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| Keywords:
73.30.+y
81.65.-b
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Published: 01 December 2002
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| PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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81.65.-b
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(Surface treatments)
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