| Original Articles |
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Lattice Disorder and Photoluminescence of Er-Implanted AlN
Crystalline Films |
| LU Fei1,2;A. Rizzi2;R. Carius3 |
| 1Department of Physics, Shandong University, Jinan 250100
1Institut für Schichten und Grenzflächen (ISG-IT), Forschungszentrum Jülich GmbH KFA, D-52425, Germany
3Institut für Photovoltaik (IPV), Forschungszentrum Jülich, Germany |
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| Cite this article: |
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LU Fei, A. Rizzi, R. Carius 2002 Chin. Phys. Lett. 19 1844-1846 |
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Abstract AlN crystalline films have been grown on SiC substrates by molecular beam epitaxy. Er doping was carried out by implantation with energy 180 keV to fluence of 1 x 15ions/cm2. The as-implanted samples were then annealed at 650, 800, 950, and 1100°C respectively, to remove defects and to make Er ions optically active. The annealing up to 1100°C did not exert significant influence on either Er distribution or the profiles of implant-induced lattice damage. Strong 1.54μm photoluminescence was observed in Er-implanted AlN at room temperature. The experimental results indicated that the photoluminescence lifetime can be improved by increasing the annealing temperature. The maximum photoluminescence lifetime was measured to be 2.3 ms.
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| Keywords:
61.72.-y
78.55.-m
78.66.Fd
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Published: 01 December 2002
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| PACS: |
61.72.-y
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(Defects and impurities in crystals; microstructure)
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78.55.-m
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(Photoluminescence, properties and materials)
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78.66.Fd
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(III-V semiconductors)
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