Novel Bismuth Nanotubes

Chin. Phys. Lett.

2002, Vol. 19

Issue (12): 1785-1787 DOI:

Original Articles

Novel Bismuth Nanotubes

SU Chang-Rong¹;LI Jia-Ming^1,2

¹Department of Physics, Center for Atomic and Molecular Nanosciences, Tsinghua University, Beijing 100084 ²Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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SU Chang-Rong, LI Jia-Ming 2002 Chin. Phys. Lett. 19 1785-1787

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Abstract Theoretical investigations show that bismuth nanotubes are semiconductors for all diameters. For small diameter bismuth nanotubes, the band structures and bandgaps vary strongly with the strong hybridization effect. When the diameters are larger than 18Å, the bandgaps of Bi (n,n) and (n,0) nanotubes approach to 0.63 eV, corresponding to the bandgap of bismuth sheet at the Γ point. Thus, bismuth nanotubes are expected to be a potential semiconductor nanomaterial in future nanoelectronics.

Keywords: 31.15.Ar 61.46.+w 73.22.-f 81.07.De

Published: 01 December 2002

PACS:	31.15.Ar
	61.46.+w
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	81.07.De	(Nanotubes)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I12/01785

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