| Original Articles |
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Characterization of Mn-Doped Ba1-xSrxTiO3 Thin Films Prepared by the Sol-Gel Method |
| REN Tian-Ling1;BAO Jun-Bo1,2;WANG Xiao-Ning1;LIU Jian-She1;LIU Li-Tian1;LI Zhi-Jian1;LI Xing-Jiao2 |
| 1Institute of Microelectronics, Tsinghua University, Beijing 100084
2Department of Solid Electronics, Huazhong University of Science and Technology, Wuhan 430074
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| Cite this article: |
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REN Tian-Ling, BAO Jun-Bo, WANG Xiao-Ning et al 2002 Chin. Phys. Lett. 19 1724-1726 |
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Abstract Undoped and Mn-doped Ba1-xSrxTiO3 (BST) thin films have been fabricated on Pt/Ti/SiO2/Si by an aqueous acetate sol-gel method. The BST stock solution can be easily mixed with an aqueous metal ion solution and is stable at room temperature. The annealing temperature of the doped and undoped films is between 650-750°C. The x-ray photoelectron spectra (XPS) results show that the Mn 2p3/2 valence state in the BST is the same as that of the original Mn(II) dopant. The dielectric constant of the BST thin films can be increased to 800, and the loss tangent can be decreased to 0.01 due to the Mn(II) doping. The leakage current of the BST films can also be greatly reduced.
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| Keywords:
85.50.+k
77.84.-s
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Published: 01 November 2002
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| PACS: |
85.50.+k
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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