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Storage of Photoexcited Electron-Hole Pairs in an AlAs/GaAs
Heterosturcture Created by Electron Transfer in Real and k Spaces |
PENG Jin;HU Bing;HU Cheng-Yong;BIAN Song-Bao;YANG Fu-Hua;ZHENG Hou-Zhi |
National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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Cite this article: |
PENG Jin, HU Bing, HU Cheng-Yong et al 2002 Chin. Phys. Lett. 19 1540-1542 |
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Abstract The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transfering electrons in both real and k spaces through resonant Γ - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.
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Keywords:
79.60.Jv
42.79.Vb
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Published: 01 October 2002
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PACS: |
79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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42.79.Vb
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(Optical storage systems, optical disks)
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