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Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate |
| LÜ Jian-Guo;YE Zhi-Zhen;WANG Lei;ZHAO Bing-Hui;HUANG Jing-Yun |
| State Key Laboratory of Silicon Materials, Zhejiang University,
Hangzhou 310027 |
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| Cite this article: |
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LÜ, Jian-Guo, YE Zhi-Zhen et al 2002 Chin. Phys. Lett. 19 1494-1497 |
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Abstract We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an α-Al2O3 (0001) substrate by solid-source chemical vapor deposition (CVD). Zn(CH3COO)2.2H2O was used as the precursor and CH3COONH4 as the nitrogen source. Growth temperature is varied from 300°C to 600°C. The as-grown ZnO film deposited at 500°C showed p-type conduction with its resistivity of 42 Ωcm, carrier density 3.7 x 1017cm-3 and Hall mobility 1.26cm2V-1.s-1 at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance about 85% in the visible region and a band gap of 3.21 eV at room temperature.
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| Keywords:
61.72.Vv
68.55.Jk
81.15.Gh
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Published: 01 October 2002
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