Self-Mode-Locking in a Diode-Pumped Self-Q-Switched
Nd<sup>3+</sup>, Cr<sup>4+</sup>: YAG Laser

Chin. Phys. Lett.

2002, Vol. 19

Issue (10): 1450-1452 DOI:

Original Articles

Self-Mode-Locking in a Diode-Pumped Self-Q-Switched Nd³⁺, Cr⁴⁺: YAG Laser

YANG Lin^1,2;FENG Bao-Hua¹;ZHANG Zhi-Guo¹;Volker Gaebler³;LIU Bai-Ning³;Hans J. Eichler³;ZHANG Shi-Wen⁴

¹Laboratory of Optical Physics, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 ²State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074 ³Optical Institute, Technical University Berlin, Str. d. 17. Juni 135, D-10623 Berlin, Germany ⁴North China Research Institute of Electro-Optics, Beijing 100080

Cite this article:

YANG Lin, FENG Bao-Hua, ZHANG Zhi-Guo et al 2002 Chin. Phys. Lett. 19 1450-1452

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Abstract We report for the first time on the observation of self-mode-locking in a diode pumped self-Q-switched (SQS) Nd³⁺, Cr⁴⁺:YAG laser. This phenomenon results from significant excited state absorption of the Cr⁴⁺ ions in the co-doped host during the SQS laser pulses. The self-mode-locking occurs already slightly above the SQS laser threshold. Experiments using relatively low saturable intensity achieved a modulation depth of more than 40%.

Keywords: 42.55.Xi 42.60.Fc 42.60.Gd

Published: 01 October 2002

PACS:	42.55.Xi	(Diode-pumped lasers)
	42.60.Fc	(Modulation, tuning, and mode locking)
	42.60.Gd	(Q-switching)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2002/V19/I10/01450

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	YANG Lin
	FENG Bao-Hua
	ZHANG Zhi-Guo
	Volker Gaebler
	LIU Bai-Ning
	Hans J. Eichler
	ZHANG Shi-Wen

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