| Original Articles |
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GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 μm |
| PAN Zhong1;LI Lian-He1;XU Ying-Qiang1;ZHANG Wei1;LIN Yao-Wang1;ZHANG Rui-Kang2;ZHONG Yuan2;REN Xiao-Min2 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
2Beijing University of Post and Telecom, P. O. Box 66, Beijing 100876
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| Cite this article: |
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PAN Zhong, LI Lian-He, XU Ying-Qiang et al 2001 Chin. Phys. Lett. 18 1249-1251 |
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Abstract A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCE-PD) operated at wavelength of 1.3 μm with the full-width at half-maximum of 4 nm was demonstrated. The GaInNAs RCE-PD was grown by molecular-beam epitaxy using a home-made ion-removed dc-plasma cell as nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100 μm diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is -18 V. The measured 3dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.
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| Keywords:
68.55.Bd
78.55.Cr
78.65.Fa
61.70.At
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Published: 01 September 2001
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