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Dependence of 1.54-μm Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich SiO2 Films Deposited by Magnetron
Sputtreing
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| RAN Guang-Zhao1;CHEN Yuan1;MA Zhen-Chang2;ZONG Wan-Hua2;XIE Li-Qing3;GUO Chun-Gang3;QIN Guo-Gang1,4 |
| 1Department of Physics, Peking University, Beijing 100871
2National Key Laboratory for ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
3Key Laboratory in University for Radiation Beam Technology and
4Materials Modification, Beijing Normal University, Beijing 100875
International Center for Materials Physics, Chinese Academy of
Sciences, Shenyang 110015
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| Cite this article: |
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RAN Guang-Zhao, CHEN Yuan, MA Zhen-Chang et al 2001 Chin. Phys. Lett. 18 986-988 |
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Abstract Room-temperature 1.54-μm photoluminescence (PL) is observed from Er-doped Si-rich SiO2 (SiO2:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO2: Si: Er films, the percentage area of the Si target in the composite SiO2-Si-Er target was changed from 0, to 10%, 20% and 30%. The percentage area of the Er target was fixed at 1%. It is found that the optimum annealing temperatures for Er3+ luminescence intensities are 900°C for the SiO2:Er film and 900, 800, and 700°C for the SiO2:Si:Er films containing 10%, 20% and 30% excess-Si (percentage areas of Si target), respectively. The SiO2:Si:Er film containing 20% excess-Si and annealed at 800°C has the intensest PL.
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| Keywords:
78.55.-m
73.61.Tm
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Published: 01 July 2001
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