A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In<suB>0.5</suB>Ga<suB>0.5</suB>As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy

Chin. Phys. Lett.

2001, Vol. 18

Issue (4): 608-610 DOI:

Original Articles

A Narrow Photoluminescence Linewidth of 19.2 meV at 1.35μm from In_0.5Ga_0.5As/GaAs Quantum Island Structure Grown by Molecular Beam Epitaxy

WANG Xiao-Dong;NIU Zhi-Chuan;FENG Song-Lin;MIAO Zhen-Hua

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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WANG Xiao-Dong, NIU Zhi-Chuan, FENG Song-Lin et al 2001 Chin. Phys. Lett. 18 608-610

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Abstract Self-organized In_0.5Ga_0.5As/GaAs quantum island structure emitting at 1.35μm at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)₁/(GaAs)₁ monolayer deposition method. Photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_0.5Ga_0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In_0.2Ga_0.8As layer overgrown on the top of islands. The mounds-like morphology of the islands elongated along the [1ī0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1ī0] direction. Our results present important information for the fabrication of 1.3μm wavelength quantum dot devices.

Keywords: 81.05.Ea 68.35.Bs 78.66.Fd

Published: 01 April 2001

PACS:	81.05.Ea	(III-V semiconductors)
	68.35.Bs
	78.66.Fd	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I4/0608

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	WANG Xiao-Dong
	NIU Zhi-Chuan
	FENG Song-Lin
	MIAO Zhen-Hua

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