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Effects of GaAs on Photoluminescence Properties of Self-Assembled InAs Quantum Dots |
| WANG Xin-Qiang1;ZHANG Ye-Jin1;DU Guo-Tong1;LI Xian-Jie1,2;YIN Jing-Zhi1;CHEN Wei-You1;YANG Shu-Ren1 |
| 1Department of Electronic Engineering, State Key
Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023
2The Hebei Semiconductor Institute, Shijiazhuang 050051
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| Cite this article: |
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WANG Xin-Qiang, ZHANG Ye-Jin, DU Guo-Tong et al 2001 Chin. Phys. Lett. 18 579-581 |
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Abstract Room temperature photoluminescence(PL) spectra of InAs self-assembled quantum dots (QDs) deposited on a GaAs/InP and InP substrate are investigated. From the PL spectra, we find that the peak position of InAs QDs appears red-shift from 0.795 to 0.785 eV after we insert a thin tensile GaAs layer between InAs QD layer and InP buffer layer. In order to explain this phenomenon in theory, we examine the strain tensor in InAs quantum dots by using a valence force field model and use a five-band k . p formalism to obtain the electronic structure. The calculated results show that the ground transition energy decreases from 0.789 to 0.780 eV when the thin GaAs layer is inserted. Therefore, the PL peak position should appear red-shift as shown in the experiment.
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| Keywords:
68.35.Bs
68.65+g
78.66.Fd
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Published: 01 April 2001
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