| Original Articles |
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Epitaxial Growth of High-Quality Silicon Films on Double-Layer
Porous Silicon |
| HUANG Yi-Ping1;ZHU Shi-Yang1;LI Ai-Zhen1;WANG Jin1;HUANG Jing-Yun2;YE Zhi-Zhen2 |
| 1Department of Microelectronics, ASIC & System State
Key Laboratory, Fudan University, Shanghai 200433
2State Key Laboratory of Silicon Material Science, Zhejiang Univsity, Hangzhou 310027
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| Cite this article: |
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HUANG Yi-Ping, ZHU Shi-Yang, LI Ai-Zhen et al 2001 Chin. Phys. Lett. 18 1507-1509 |
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Abstract The epitaxial growth of high-quality silicon layer on double-layer porous silicon by ultra-high vacuum/chemical vapour deposition has been reported. The two-step anodization process results in a double-layer porous silicon structure with a different porosity. This double-layer porous silicon structure and an extended low-temperature annealing in a vacuum system was found to be helpful in subsequent silicon epitaxial growth. X-ray diffraction, cross-sectional transmission electron microscopy and spreading resistance testing were used in this work to study the properties of epitaxial silicon layers grown on the double-layer porous silicon. The results show that the epitaxial silicon layer is of good crystallinity and the same orientation with the silicon substrate and the porous silicon layer.
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| Keywords:
68.55.-a
68.60.-p
61.43.Gt
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Published: 01 November 2001
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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68.60.-p
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(Physical properties of thin films, nonelectronic)
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61.43.Gt
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(Powders, porous materials)
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