| Original Articles |
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Thermal Modification of a-SiC:H Films Deposited by Plasma Enhanced Chemical Vapour Deposition from CH4+SiH4 Mixtures
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| LIU Yi-Chun1,3; WANG Ning-Hui2; LIU Yu-Xue1;SHEN De-Zhen3;FAN Xi-Wu3;LEE Kyung-Sup4
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| 1Institute of Theoretical Physics, Northeast Normal
University, Changchun 130024
2Institute of Electrostatic Research & Specific Power, Dalian University of Technology, Dalian 116024
3Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021
4Department of Electrical & Electronic Engineering, Dongshin University, 252 Daeho-dong, Naju, Chonnam, 520-714, Korea
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| Cite this article: |
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LIU Yi-Chun, WANG Ning-Hui, LIU Yu-Xue et al 2001 Chin. Phys. Lett. 18 117-119 |
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Abstract The effects of thermal annealing on photoluminescence (PL) and structural properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapour deposition from CH4+SiH4 mixtures are studied by using infrared, PL and transmittance-reflectance spectra. In a-SiC:H network, high-temperature annealing gives rise to the effusion of hydrogen from strongly bonded hydrogen in SiH, SiH2, (SiH2)n, SiCHn and CHn configurations and the break of weak C-C, Si-Si and C-Si bonds. A structural rearrangement will occur, which causes a significant correlation of the position and intensity of the PL signal with the annealing temperature.The redshift of the PL peak is related to the destruction of the confining power of barriers.However, the PL intensity does not have a significant correlation with the annealing temperature for a C-rich a-SiC:H network, which refers to the formation of π-bond cluster as increasing carbon content. It is indicated that the thermal stability of C-rich a-Si1-xCx:H films is better than that of Si-like a-Si1-xCx:H films.
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| Keywords:
78.55.Hx
78.66.Jg
61.43.Dq
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Published: 01 January 2001
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| PACS: |
78.55.Hx
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(Other solid inorganic materials)
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78.66.Jg
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(Amorphous semiconductors; glasses)
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61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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