| Original Articles |
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Influences of H+ Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition Diamond Films |
| WANG Shuang-Bao;ZHU Pei-Ran;WANG Yu-Guang;FENG Ke-An |
| Institute of Physics, Chinese Academy of Sciences, Beijing 100080 |
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| Cite this article: |
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WANG Shuang-Bao, ZHU Pei-Ran, WANG Yu-Guang et al 2000 Chin. Phys. Lett. 17 686-688 |
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Abstract Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120 keV H+ to dose of 5 x 1014 ~ 5 x 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases. In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.
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| Keywords:
68.55.-a
61.72.-y
61.80.Jh
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Published: 01 September 2000
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| PACS: |
68.55.-a
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(Thin film structure and morphology)
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61.72.-y
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(Defects and impurities in crystals; microstructure)
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61.80.Jh
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(Ion radiation effects)
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