Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AI<suB>x</suB>Ga<suB>l-x</suB>As Quant urn Wells

Chin. Phys. Lett.

2000, Vol. 17

Issue (5): 358-359 DOI:

Original Articles

Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AI_xGa_l-xAs Quant urn Wells

LIU Jian-Jun^1,2;ZHANG Shu-Fang¹;KONG Xiao-Jun^1,2;LI Shu-Shen²

¹Department of Physics, Hebei Normal University, Shijiazhuang 050016 ²National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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LIU Jian-Jun, ZHANG Shu-Fang, KONG Xiao-Jun et al 2000 Chin. Phys. Lett. 17 358-359

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Abstract The binding energy of an exciton bound to an ionized donor impurity (D⁺, X ) located at the center or the edge in GaAs-AI_xGa_l-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.

Keywords: 71.35.-y 73.20.Dx

Published: 01 May 2000

PACS:	71.35.-y	(Excitons and related phenomena)
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I5/0358

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	ZHANG Shu-Fang
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