| Original Articles |
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FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition |
| WANG Peng-Fei1;DING Shi-Jin1;ZHANG Wei1;ZHANG Jim-Yun1;WANG Ji-Tao1;WEI William Lee2 |
| 1Department of Electronic Engineering, Fudan University, Shanghai 200433
2Taiwan Semiconductor Manufacturing Co., Hsinchu, Taiwan, China
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| Cite this article: |
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WANG Peng-Fei, DING Shi-Jin, ZHANG Wei et al 2000 Chin. Phys. Lett. 17 912-914 |
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Abstract Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor deposition. The Fourier transform infrared spectrometry (FTIR) spectra of SiOF films are deliberated to reveal the structure change of SiO2 and the mechanism of dielectric constant reduction after doping fluorine. When F is doped in SiO2 films, the Si-O stretching absorption peak will have a blue-shift due to increase of the partial charge of the O atom. The FTIR spectra indicate that some Si-OH components in the thin film can be removed after doping fluorine. These changes reduce the ionic and orientational polarization, and result in the reduction in dielectric constant of the film. According to Gaussian fitting, it is found that the Si-F2 bonds will appear in the SiOF film with increase of the fluorine content. The Si-F2 structures are liable to react with water, and cause the same increase of absorbed moisture in the film.
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| Keywords:
81.15.Gh
85.40.-e
77.55.+f
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Published: 01 December 2000
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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85.40.-e
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(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
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77.55.+f
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