Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra

Chin. Phys. Lett.

2000, Vol. 17

Issue (11): 841-843 DOI:

Original Articles

Observation of As-Grown Defects in Zn-Doped GaAs by Positron Lifetime Spectra

WANG Zhu;WANG Shao-Jie;CHEN Zhi-Quan

Department of Physics, Wuhan University, Wuhan 430072

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WANG Zhu, WANG Shao-Jie, CHEN Zhi-Quan 2000 Chin. Phys. Lett. 17 841-843

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Abstract Positron lifetime spectra were measured for the Zn-doped p-type GaAs. In comparing the horizontal-Bridgman-method-grown and the floating-zone-method grown p- type GaAs with the liquid-encapsulation-Czochralski-grown p-type GaAs samples, positron trapping into vacancy type defects was observed in the former two grown p-type GaAs. Shallow positron traps were detected, and the dominant ones were attributed to acceptor the in p-type GaAs.

Keywords: 78.70.Bj

Published: 01 November 2000

PACS:

78.70.Bj

(Positron annihilation)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2000/V17/I11/0841

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