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Photoluminescence and Microstructure of the Erbium-Doped Hydrogenated Amorphous SiOx(O < x < 2) |
| LIANG Jian-Jun1,2,3;CHEN Wei-De1,2,3;WANG Yong-Qian1,2,3;HE Jie1,2,3;ZHENG Wei-Min3;WANG Zhan-Guo1 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Center for Condensed Matter Physics and State Key Laboratory for Surface Physics, Chinese Academy of Sciences, Beijing 100080
3National Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083
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| Cite this article: |
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LIANG Jian-Jun, CHEN Wei-De, WANG Yong-Qian et al 2000 Chin. Phys. Lett. 17 838-840 |
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Abstract The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54μm has been observed at 77K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250K is slightly more than a half of that at 15K. It means that the temperature quenching effect of the PL intensity is very weak.
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| Keywords:
78.55.Ap
78.55.-m
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Published: 01 November 2000
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| PACS: |
78.55.Ap
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(Elemental semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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