| Original Articles |
|
|
|
|
Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt |
| CHEN Zhi-Ming1;MA Jian-Ping1;WANG Jian-Nong2;LU Gang2;YU Ming-Bin1;LEI Tian-Min1;GE Wei-Kun2 |
| 1Department of Applied Electronics, Xian University of Technology, Xian 710048
2Department of Physics, Hong Kong University of Sciences and Technology, Hong Kong
|
|
| Cite this article: |
|
CHEN Zhi-Ming, MA Jian-Ping, WANG Jian-Nong et al 2000 Chin. Phys. Lett. 17 770-772 |
|
|
|
Abstract Intense wide-band photoluminescence (PL) with high stability to ultraviolet (UV) light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temperature over 1500°C. X-ray diffraction results showed that the sintered material consists of mainly cubic and 6H-SiC crystallites oriented randomly and a small amount of graphite with (002) preferential orientation. PL spectra of the samples were measured under excitation of the incident UV light beam from an He-Cd laser (325 nm, 10mW) in the temperature range from 10 to 300 K. The PL spectra were found to be a single wide-band centered around 2.2 eV at room temperature and to be divided into a much more intensive blue band and a less intensive red band at low temperature. The low temperature PL bands consist of several luminescence peaks that change in intensities relatively with variation of temperature.
|
| Keywords:
78.55.-m
73.61.Jc
|
|
|
Published: 01 October 2000
|
|
| PACS: |
78.55.-m
|
(Photoluminescence, properties and materials)
|
| |
73.61.Jc
|
(Amorphous semiconductors; glasses)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
