Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer

Chin. Phys. Lett.

1999, Vol. 16

Issue (9): 665-666 DOI:

Original Articles

Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer

LE Zi-chun¹;L. Dreeskornfeld²;S. Rahn²;R. Segler²;U. Kleineberg²;U. Heinzmann²

¹Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 ²Fakultät für Physik, Universität Bielefeld, Universitatsstraβe 25, D-33615 Bielefeld, Germany

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LE Zi-chun, L. Dreeskornfeld, S. Rahn et al 1999 Chin. Phys. Lett. 16 665-666

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Abstract Mo/Si multilayer mirrors (30 periods, doublelayer thickness 7nm) with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5μm were etched by reactive ion etching (RIE) in a fluorinated plasma. The etch rate, selectivity and etch profile were investigated as a function of the gas mixture, pressure, and plasma rf power. The groove depth and the etch profile were investigated by an atomic force microscope before RIE, after RIE and after resist removal.

Keywords: 52.75.Rx 81.65.Cf 07.10.Pz

Published: 01 September 1999

PACS:	52.75.Rx
	81.65.Cf	(Surface cleaning, etching, patterning)
	07.10.Pz	(Instruments for strain, force, and torque)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I9/0665

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	LE Zi-chun
	L. Dreeskornfeld
	S. Rahn
	R. Segler
	U. Kleineberg
	U. Heinzmann

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