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Electronic and Optical Properties of (GaN)n/(AlN)n(001) Superlattices |
| LI Kai-hang;HUANG Mei-chun;ZHU Zi-zhong;ZHANG Zhi-peng |
| Department of Physics, Xiamen University, Xiamen 361005 |
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| Cite this article: |
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LI Kai-hang, HUANG Mei-chun, ZHU Zi-zhong et al 1999 Chin. Phys. Lett. 16 437-439 |
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Abstract The band structure of the short period zinc-blende (GaN)n/(AlN)n(001) superlattices has been calculated by means of semi-empirical tight-binding sp3s* method. The superlattices energy gap dependence on layer number n is given out. On the basis of the calculated eigenfunctions and eigenvalues of the superlattices (SL), the imaginary parts of the dielectric function ε2(ω) of (GaN)n/(AlN)n(001) superlattices were obtained. In order to compare with the optical properties of bulk zinc-blende GaN and AlN, we also calculated ε2(ω) of the two compounds. It is shown that there are some discernible effects due to confinement and superlattice periodicity.
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| Keywords:
71.55.Eq
71.70.-d
73.20.Dx
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Published: 01 June 1999
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