Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

Chin. Phys. Lett.

1999, Vol. 16

Issue (4): 298-300 DOI:

Original Articles

Red Luminesecnce from Self-Assembled InAlAs/AlGaAs Quantum Dots with Bimodal Size Distribution

ZHOU Wei¹;XU Bo¹;XU Huai-zhe¹;LIU Feng-qi¹;GONG Qian¹;JIANG Wei-hong¹;SUN Zhong-zhe¹;DING Ding¹;LIANG Ji-bei¹,WANG Zhan-guo¹;ZHU Zuo-ming²;LI Guo-hua²

¹Laboratory of Semiconductor Materials Science, ²National Laboratory for Superlittices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

ZHOU Wei, XU Bo, XU Huai-zhe et al 1999 Chin. Phys. Lett. 16 298-300

Download: PDF(321KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Red-emitting at about 640nm from self-assembled In_0.55Al_0.45As/Al_0.5Ga_0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy are demonstrated. A doublepeak structure of photoluminescence (PL) spectra from quantum dots was observed, and a bimodal distribution of dot sizes was also confirmed by an atomic force micrograph (AFM) image for uncapped sample. From the temperature and excitation intensity dependence of PL spectra, it is found that the double-peak structure of PL spectra from quantum dots is strongly correlated to the two predominant quantum dot families. Taking into account the quantum-size effect on the peak energy, it is proposed that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical to the statistical distribution of dot lateral size from the AFM image.

Keywords: 78.66.Fd

Published: 01 April 1999

PACS:

78.66.Fd

(III-V semiconductors)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I4/0298

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	ZHOU Wei
	XU Bo
	XU Huai-zhe
	LIU Feng-qi
	GONG Qian
	JIANG Wei-hong
	SUN Zhong-zhe
	DING Ding
	LIANG Ji-bei
	WANG Zhan-guo
	ZHU Zuo-ming
	LI Guo-hua

Related articles from Frontiers Journals

[1]	TENG Long, ZHANG Rong, XIE Zi-Li, TAO Tao, ZHANG Zhao, LI Ye-Cao, LIU Bin, CHEN Peng, HAN Ping, ZHENG You-Dou. Raman Scattering Study of In_xGa_1−xN Alloys with Low Indium Compositions[J]. Chin. Phys. Lett., 2012, 29(2): 298-300
[2]	WANG Fei, , ZHANG Xin-Liang, YU Yu, XU En-Ming . Preprocessing-Free All-Optical Clock Recovery from NRZ and NRZ-DPSK Signals Using an FP-SOA Based Active Filter**[J]. Chin. Phys. Lett., 2011, 28(6): 298-300
[3]	GAO Bo, LIU Hong-Xia, WANG Shu-Long . AlGaN/GaN Ultraviolet Detector with Dual Band Response**[J]. Chin. Phys. Lett., 2011, 28(5): 298-300
[4]	TANG Guang-Hua, XU Bo, JIANG Li-Wen, KONG Jin-Xia, KONG Ning, LIANG De-Chun, LIANG Ping, YE Xiao-Ling, JIN Peng, LIU Feng-Qi, CHEN Yong-Hai, WANG Zhan-Guo. A Photovoltaic InAs Quantum-Dot Infrared Photodetector[J]. Chin. Phys. Lett., 2010, 27(4): 298-300
[5]	LU Hui-Min, CHEN Gen-Xiang, JIAN Shui-Sheng. Design of Phosphor-Free Single-Chip White Light-Emitting Diodes Using InAlGaN Irregular Multiple Quantum Well Structures[J]. Chin. Phys. Lett., 2009, 26(8): 298-300
[6]	RUAN Jun, YU Tong-Jun, JIA Chuan-Yu, TAO Ren-Chun, WANGZhan-Guo, ZHANG Guo-Yi. Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes[J]. Chin. Phys. Lett., 2009, 26(8): 298-300
[7]	FAN Ya-Ming, ZHANG Xing-Wang, YOU Jing-Bi, YING Jie, TAN Hai-Ren, CHEN Nuo-Fu. Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)[J]. Chin. Phys. Lett., 2009, 26(5): 298-300
[8]	XIONG Yong-Hua, NIU Zhi-Chuan, DOU Xiu-Ming, SUN Bao-Quan, HUANG She-Song, NI Hai-Qiao, DU Yun, XIA Jian-Bai. Electrically Driven InAs Quantum-Dot Single-Photon Sources[J]. Chin. Phys. Lett., 2009, 26(2): 298-300
[9]	WANG Hai-Li, XIONG Yong-Hua, HUANG She-Song, NI Hai-Qiao, HE Zhen-Hong, DOU Xiu-Ming, NIU Zhi-Chuan. Photoluminescence of Charged Low-Density InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2009, 26(10): 298-300
[10]	GAO Hai-Yong, YAN Fa-Wang, FAN Zhong-Chao, LI Jin-Min, ZENG Yi-Ping, WANG Guo-Hong. Improved Light Extraction of GaN-based LEDs with Nano-roughened p-GaN Surfaces[J]. Chin. Phys. Lett., 2008, 25(9): 298-300
[11]	WANG Zhi-Cheng, XU Bo, CHEN Yong-Hai, SHI Li-Wei, LIANG Zhi-Mei, WANGZhan-Guo. Electronic Energy Levels in an Asymmetric Quantum-Dots-in-a-Well Structure for Infrared Photodetectors[J]. Chin. Phys. Lett., 2008, 25(7): 298-300
[12]	S. S. Ng, Z. Hassan, H. Abu Hassan. Composition Dependence of Surface Phonon Polariton Mode in Wurtzite In_xGa_1-xN (0≤x≤1) Ternary Alloy[J]. Chin. Phys. Lett., 2008, 25(12): 298-300
[13]	CHEN Chen, JIANG Wen-Hai, REN Chun-Jiang, LI Zhong-Hui, JIAO Gang, DONG Xun, CHEN Tang-Sheng. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures[J]. Chin. Phys. Lett., 2007, 24(9): 298-300
[14]	ZOU Ji-Jun, CHANG Ben-Kang, YANG Zhi, DU Xiao-Qing, GAO Pin, QIAO Jian-Liang. Evolution of Photocurrent during Coadsorption of Cs and O on GaAs (100)[J]. Chin. Phys. Lett., 2007, 24(6): 298-300
[15]	JI Xiao-Li, JIANG Ruo-Lian, XIE Zi-Li, LIU Bin, ZHOU Jian-Jun, LI Liang, HAN Ping, ZHANG Rong, ZHENG You-Dou, GONG Hai-Mei. High-Reflectivity AlGaN/AlN Distributed Bragg Reflector in Ultraviolet Region[J]. Chin. Phys. Lett., 2007, 24(6): 298-300

Viewed

Full text

Abstract