| Original Articles |
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Electron Field Emission from Different sp3 Content Diamond-Like Carbon Films |
| MAO Dong-sheng1;ZHAO Jun1;LI Wei1;WANG Xi1;LIU Xiang-huai1;ZHU Yu-kun2;ZHOU Jiang-yun2;FAN Zhong2;LI Qiong2;XU Jing-fang2 |
| 1Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050
2Department of Electronics Science and Technology, East China Normal University, Shanghai 200062
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| Cite this article: |
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MAO Dong-sheng, ZHAO Jun, LI Wei et al 1999 Chin. Phys. Lett. 16 152-154 |
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Abstract Different sp3 content diamond-like carbon films are deposited on to highly n-doped Si (111) substrates by a new plasma deposition technique-filtered arc deposition. Their electron field emission properties are studied by using a simple diode structure. It is showed that the turn-on field is decreased and field emission current density is increased with the increasing sp3 content (75-80%, 80-83%,and 88-90%) of the films. Field emission current of 0.1μA from the three samples was detected under the electric field of 10.1, 5.6, and 2.9 V/μm and emission current density of 4.4, 15.2, and 43.2μA/cm2, respectively, under 14.3 V/μm. Fowler-Nordheim (F-N) plots of the three samples nearly show of lineaity indicating that electron field emission obeys F-N theory.
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| Keywords:
79.70.+q
81.05.Gc
79.60.Dp
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Published: 01 February 1999
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.05.Gc
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(Amorphous semiconductors)
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79.60.Dp
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(Adsorbed layers and thin films)
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