High Efficient Green Emission from Organic Multi-quantum Wells Structure

Chin. Phys. Lett.

1999, Vol. 16

Issue (2): 149-151 DOI:

Original Articles

High Efficient Green Emission from Organic Multi-quantum Wells Structure

XIE Zhi-yuan¹;HUANG Jing-song¹;LI Chuan-nan¹;CHEN Bai-jun¹;LIU Shi-yong¹;LI Yan-qin²;WANG Yue²;SHEN Jia-cong²

¹State Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023 ²Key Laboratory of Supramolecular Structure and Spectroscopy, Jilin University, Changchun 130023

Cite this article:

XIE Zhi-yuan, HUANG Jing-song, LI Chuan-nan et al 1999 Chin. Phys. Lett. 16 149-151

Download: PDF(251KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Organic green light emitting devices (LEDs) with multi-quantum wells (MQWs) structure were fabricated. Aromatic diamine was used as hole-transporting layer and potential barrier layer; tris (8-hydroxyquinoline) aluminum acted as electron transporting layer and MQWs green emitting layer. The influence of the barrier layer thickness and quantum well number to the device performance was also investigated. The barrier thickness must be thin (such as 4nm) enough to tunnel through and distribute charge carriers uniformly in different wells (mainly electrons). The organic MQWs LEDs showed enhanced electroluminescent efficiencies. Maximum luminous efficiency and external quantum efficiency were 1.241m/W and 1.04%, respectively.

Keywords: 78.60.Fi 78.66.Qn 85.60.Jb

Published: 01 February 1999

PACS:	78.60.Fi	(Electroluminescence)
	78.66.Qn	(Polymers; organic compounds)
	85.60.Jb	(Light-emitting devices)

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I2/0149

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	XIE Zhi-yuan
	HUANG Jing-song
	LI Chuan-nan
	CHEN Bai-jun
	LIU Shi-yong
	LI Yan-qin
	WANG Yue
	SHEN Jia-cong

Related articles from Frontiers Journals

[1]	ZENG Chang, ZHANG Shu-Ming, WANG Hui, LIU Jian-Ping, WANG Huai-Bing, LI Zeng-Cheng, FENG Mei-Xin, ZHAO De-Gang, LIU Zong-Shun, JIANG De-Sheng, YANG Hui. Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN**[J]. Chin. Phys. Lett., 2012, 29(1): 149-151
[2]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 149-151
[3]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 149-151
[4]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 149-151
[5]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 149-151
[6]	CHEN Jun, FAN Guang-Han, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer**[J]. Chin. Phys. Lett., 2011, 28(12): 149-151
[7]	WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, LUO Yi . Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED**[J]. Chin. Phys. Lett., 2011, 28(11): 149-151
[8]	FENG Lie-Feng, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(10): 149-151
[9]	SUN Jing, ZHAO Yi-Kun, WANG Xin-Qiang, REN Quan, CHEN Jing-Wei, ZHANG Guang-Hui, XU Dong, WANG He-Zhou . Nonlinear Optical Studies of [(C₄H₉)₄N][Ni(dmit)₂] by Z-Scan Technique**[J]. Chin. Phys. Lett., 2011, 28(10): 149-151
[10]	LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 149-151
[11]	DU Xiao-Zhang, LU Hai, CHEN Dun-Jun, XIU Xiang-Qian, ZHANG Rong, ZHENG You-Dou. UV Light-Emitting Diodes at 340nm Fabricated on a Bulk GaN Substrate[J]. Chin. Phys. Lett., 2010, 27(8): 149-151
[12]	QIAO Xian-Feng, CHEN Jiang-Shan, MA Dong-Ge. Comparative Study on Hole Transport in N,N'-bis(naphthalen-1-yl)-N,N'- bis(pheny) Benzidine and 4,4',4''-tri(N-carbazolyl)triphenylamine[J]. Chin. Phys. Lett., 2010, 27(8): 149-151
[13]	WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 149-151
[14]	LEI Tong, WANG Xiao-Ping, WANG Li-Jun, LV Cheng-Rui, ZHANG Shi, ZHU Yu-Zhuan. Electroluminescence from Multilayered Diamond/CeF₃/SiO₂ Films[J]. Chin. Phys. Lett., 2010, 27(4): 149-151
[15]	PAN Yao-Bo, HAO Mao-Sheng, QI Sheng-Li, FANG Hao, ZHANG Guo-Yi. Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes[J]. Chin. Phys. Lett., 2010, 27(3): 149-151

Viewed

Full text

Abstract