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Characteristics of the Organic Single-Quantum-Well Devices Fabricated by the Doping Method |
| HUANG Jing-song;XIE Zhi-yuan;YANG Kai-xia;LI Chuan-nan;ZHAO Yi;LIU Shi-yong |
| National Laboratory of Integrated Optoelectronics, Jilin University, Changchun 130023 |
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| Cite this article: |
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HUANG Jing-song, XIE Zhi-yuan, YANG Kai-xia et al 1999 Chin. Phys. Lett. 16 922-924 |
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Abstract A doping technique to fabricate an organic quantum-well electroluminescent device is demonstrated. The fabricated single-quantum-well device consists of the following structure: an N,N’-Bis(3-methyphenyl)-N,N’-diphenyl benzidine layer for hole transportation, an 8- (quino1inoJate)-aluminum (AJq) layer for electron transportation and a light emitting layer of Alq doped with 5,6,11,12-tetraphenylnaphthacene(rubrene). The dopant rubrene serves as a potential well, whereas the undoped Alq layer serves as a barrier layer. The efficiency and luminance of the device have been significantly improved. The observed phenomena of the spectral narrowing and the emission peak energy blue-shift are a result of the recombination of carriers from the quantized energy states.
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| Keywords:
78.60.Fi
78.66.Qn
85.60.Jb
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Published: 01 December 1999
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