AIN:TbF<suB>3</suB> Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering

Chin. Phys. Lett.

1999, Vol. 16

Issue (11): 841-843 DOI:

Original Articles

AIN:TbF₃ Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering

ZHAO Yan-li;ZHONG Guo-zhu;FAN Xi-wu;LI Chang-hua

Changchun Institute of Physics and Laboratory of Excited States Processes, Chinese Academy of Sciences, Changchun 130021

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ZHAO Yan-li, ZHONG Guo-zhu, FAN Xi-wu et al 1999 Chin. Phys. Lett. 16 841-843

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Abstract High quality AlN thin films doped with TbF₃ were prepared by rf magnetron reaction sputtering. High purity AI metal and TbF₃ were used as target materials with N₂ and Ar as sputtering gases. The influence of preparation conditions on the photoluminescence brightness was studied, and the electroluminescence was found to have a similar dependence on the concentration of TbF₃ and substrate temperature. The characteristic emission of Tb³⁺ ions was obtained in an AIN:TbF₃ alternating current thin film electroluminescence device prepared with 600°C substrate temperature and 4.0mol% concentration of TbF₃.

Keywords: 78.60.Fi

Published: 01 November 1999

PACS:

78.60.Fi

(Electroluminescence)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1999/V16/I11/0841

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	ZHAO Yan-li
	ZHONG Guo-zhu
	FAN Xi-wu
	LI Chang-hua

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