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Loss of Light Yield of Doped Lead Tungstate Crystals After Irradiation |
HE Jing-tang;LÜ Yu-sheng;CHEN Duan-bao;LI Zu-hao;BIAN Jian-guo;ZHU Guo-yi;TANG Xiao-wei;CHEN Gang1;ZHENG Lian-rong1;CHEN Xiao-hong1;REN Shao-xia1 |
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
1Beijing Inorganic Crystal Laboratory, Beijing Glass Research Institute, Beijing 100062
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Cite this article: |
HE Jing-tang, LÜ, Yu-sheng et al 1999 Chin. Phys. Lett. 16 745-746 |
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Abstract Loss of light yield of doped lead tungstate crystals after irradiation with a low dose rate has been observed. The La, Pr, and Y doping may improve radiation hardness, whereas Bi or Mo doping is harmful.
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Keywords:
61.80.Ed
07.85.Fv
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Published: 01 October 1999
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PACS: |
61.80.Ed
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(γ-ray effects)
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07.85.Fv
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(X- and γ-ray sources, mirrors, gratings, and detectors)
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Abstract
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