| Original Articles |
|
|
|
|
Cubic-BN-Like Structure of B-C-N Films Synthesized by Plasma
Source Ion Nitriding
|
| LEI Ming-kai1,2;YUAN Li-jiang1;ZHANG Zhong-lin1;MA Teng-cai2 |
| Department of Materials Engineering, National Laboratory of Materials Modification, Dalian University of Technology, Dalian 116024 |
|
| Cite this article: |
|
LEI Ming-kai, YUAN Li-jiang, ZHANG Zhong-lin et al 1999 Chin. Phys. Lett. 16 71-73 |
|
|
|
Abstract Plasma source ion nitriding has emerged as a low-temperature, low-pressure nitriding approach for implanting nitrogen ions and then diffusing them into bulk materials. The ion-plating B-C films were nitrided to synthesize B-C-N films at a nitriding temperature from 300 to 500°C. The x-ray photoelectron spectroscopy and diffuse reflectance Fourier transform infrared spectra analyses showed that the amorphous B-C-N films synthesized at 500°C are composed mainly of cubic-BN-like and hexagonal-BN-like plain microdomains. The higher nitriding temperature contributes to the formation of cubic-BN-like B-C-N structure in the B-C-N films.
|
| Keywords:
81.65.Lp
81.05.Je
|
|
|
Published: 01 January 1999
|
|
| PACS: |
81.65.Lp
|
(Surface hardening: nitridation, carburization, carbonitridation ?)
|
| |
81.05.Je
|
(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
