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Lateral Ordered InGaAs Self-organized Quantum Dots Grown on (311) GaAs by Conventional Molecular Beam Epitaxy |
| XU Huai-zhe;JIANG Wei-hong;XU Bo;ZHOU Wei;WANG Zhan-guo
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| Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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XU Huai-zhe, JIANG Wei-hong, XU Bo et al 1999 Chin. Phys. Lett. 16 68-70 |
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Abstract Self-assembled InxGal-xAs quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of InxGal-xAs QDs with lower In content around 0.3 has been observed on As-terminated (B type) surfaces. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311) B surface, and is strongly dependent upon the In content x. The ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) and (311) Ga-terminated (A type) substrates.
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| Keywords:
81.05.Ea
78.55.Cr
68.55.Jk
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Published: 01 January 1999
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